First-principles calculation of capacitance including interfacial effects

نویسندگان

  • Bora Lee
  • Choong-Ki Lee
  • Seungwu Han
  • Jaichan Lee
  • Cheol Seong Hwang
چکیده

Bora Lee, Choong-Ki Lee, Seungwu Han, Jaichan Lee, and Cheol Seong Hwang Department of Physics, Ewha Womans University, Seoul 120-750, Republic of Korea School of Materials Science & Engineering, SungKyunKwan University, Suwon 440-746, Republic of Korea School of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Interfacial capacitance effects in magnetic tunneling junctions

We have fabricated magnetic tunneling junctions by oxidizing a wedge-shaped aluminum layer to produce junctions with ideal oxidized as well as under and over oxidized junctions on a single wafer. By investigating the capacitance spectra, we are able to study the effects due to interface charge accumulation. The electron–electron interaction among accumulated interface charges leads to a voltage...

متن کامل

Nucleotide capacitance calculation for DNA sequencing.

Using a first-principles linear response theory, the capacitance of the DNA nucleotides, adenine, cytosine, guanine, and thymine, are calculated. The difference in the capacitance between the nucleotides is studied with respect to conformational distortion. The result suggests that although an alternate current capacitance measurement of a single-stranded DNA chain threaded through a nanogap el...

متن کامل

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon subs...

متن کامل

FIRST PRINCIPLES COMPUTATIONS Effects of temperature and ferromagnetism on the c-Ni/c-Ni3Al interfacial free energy from first principles calculations

The temperature dependencies of the c(f.c.c.)Ni/c-Ni3Al(L12) interfacial free energy for the {100}, {110}, and {111} interfaces are calculated using firstprinciples calculations, including both coherency strain energy and phonon vibrational entropy. Calculations performed including ferromagnetic effects predict that the {100}-type interface has the smallest free energy at different elevated tem...

متن کامل

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (\40 mm) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detector...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008